Power Discrete Market Competitive Landscape, Factor Analysis, 2020–2026

[supriya Kokate]

The global Power Discrete Market is estimated to reach USD 20.36 Billion by 2026, according to a new report by Reports and Data. This can be mainly associated with the steadily growing demand for IGBTs (Insulated Gate Bipolar Transistors), the use of discrete silicon-based IGBTs which enhances the efficiency of electronic devices that range from consumer electronics to power electronics. The purpose of silicon-based IGBTs adds significantly to the advancement of power electronics. Based on statistics, the rise in demand for IGBTs will boost market growth. With increasing energy needs across the world, the power grid infrastructure is refurbished to generate more power, distribute and transmit it efficiently, and controls the consumption as per the demands of the end-user, hence propelling its need in the global power discrete market. In the industrial aviation sector, technologically advanced power discrete devices are achieving popularity to meet the ever-increasing electronic content in new generation aircraft.
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The report covers in-depth profiling of the prominent players of the industry and includes Infineon Technologies AG, ST Microelectronics N.V., Mitsubishi Electric Corp., International Rectifier, ON Semiconductor Corp Vishay Intertechnology Inc., Vectron International, Fairchild Semiconductor International Inc., Toshiba Corp., Siward Crystal Technology, Fuji Electric Co Ltd, Renesas Electronics Corp, and Tongfang Guoxin Electronics among others. Furthermore, it offers a detailed analysis of the competitive landscape of the market with insightful data on recent trends, technological developments, product advancements, methodologies, and strategic business decisions such as mergers and acquisitions, joint ventures, collaborations, and product launches, among others.
It further offers critical insights on the regional bifurcation of the market with regards to market scope, market size, market share, revenue generation, production and consumption ratio, supply and demand ratio, and analysis of the key players operating in those regions. The regional analysis covers North America, Europe, Asia Pacific, Latin America, and Middle East & Africa.
The report studies dynamic market elements such as drivers, restraints, challenges, threats, opportunities, and growth prospects, among others. The report offers strategic recommendations to the new entrants as well as established players to assist them in capitalizing on the advantageous opportunities.
For the purpose of this report, Reports and Data have segmented global Power Discrete Market on the basis of Product, Application, End Users, Range and region:
Product Outlook (Volume, Thousand Units; and Revenue, USD Billion; 2016-2026)
• Insulated Gate Bipolar Transistor (IGBT)
• Gallium Nitride (GaN)
• Power rectifiers
• Metal Oxide Semiconductor Field Effect Transistor (MOSFET)
• Silicon Carbide (SiC)
End User Outlook (Volume, Thousand Units; and Revenue, USD Billion; 2016-2026)
• EV/HEV
• Renewable Energy
• Industrial Motor Drive
Application Outlook (Volume, Thousand Units; and Revenue, USD Billion; 2016-2026)
• Automotive
• Consumer
• Medical
• Cellular handsets and infrastructure
• Lighting
Range Outlook (Volume, Thousand Units; and Revenue, USD Billion; 2016-2026)
• Less than100V
• 100V to 600V
• 600V to 200V
• 1200V
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Key Point Summary of the Report:
The global Power Discrete market research report is an investigative study offering key insights into the latest growth trends, developments, technological and product advancements, and the research and development scenario. The report also covers the market aspects that directly influence the growth of the market. These features include strategies undertaken by the prominent players, their expansion tactics, and the product portfolios of the companies, and micro and macro-economic factors.
The study also analyses the crucial market aspects, including R&D, product launches and brand promotions, mergers and acquisitions, collaborations, joint ventures, and the growth pattern on both regional and global levels. The report offers an in-depth evaluation of factors such as cost, capacity, rates of production and consumption, gross revenue, profit margin, demand and supply ratio, import/export, market share, market size, and market trends.
Key Question Addressed in the Report:
• What are the key driving factors of the Power Discrete industry?
• What will the market size and growth rate be throughout the forecast period?
• Who are the prominent players of the Power Discrete industry?
• What are the technological advancements and product developments taking place in the Power Discrete market?
• What are the key outcomes of the SWOT analysis and Porter’s Five Forces analysis?
• Which region is expected to dominate the market in the coming years?
• What are the key risk factors and challenges the companies will face in the market?
Table of Content:

Chapter 1. Market Synopsis
1.1. Market Definition
1.2. Research Scope & Premise
1.3. Methodology
1.4. Market Estimation Technique
Chapter 2. Executive Summary
2.1. Summary Snapshot, 2018-2026
Chapter 3. Indicative Metrics
Chapter 4. Power discrete Market Segmentation & Impact Analysis
4.1. Power discrete Market Segmentation Analysis
4.2. Industrial Outlook
4.2.1. Market indicators analysis
4.2.2. Market drivers analysis
4.2.2.1. Increasing demand for IGBTs
4.2.2.2. The use of discrete silicon-based IGBTs
4.2.3. Market restraints analysis
Continued….
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